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HyperX Impact HX316LS9IB/8 Memory 1600 MHz DDR3L CL9 SODIMM 1.35 V, 8 GB, Black 12800

Kingston HX316LS9IB/8 Overview

The 8GB HyperX IMPACT DDR3L 1600 MHz SO-DIMM Memory Module from Kingston is an unbuffered, non-ECC, dual-rank module based on sixteen 512M x 8-bit DDR3 FBGA components. This DDR3L module, the L standing for Low-Voltage, can operate at 1.35V to help reduce energy consumption, as opposed to the 1.5V required by standard DDR3 RAM. Furthermore, it features adjustable timings ranging from 9-9-9 to 6-6-6. Please note that to lower the timings, you’ll have to lower its clock frequency as well. With more RAM, you can boot up quicker, have more programs and files open, and be able to quickly switch between applications without much delay.

PnP JEDEC Timing Parameters
DDR3-1600 CL9-9-9 @ 1.35 V or 1.5 V
DDR3-1333 CL8-8-8 @ 1.35 V or 1.5 V
DDR3-1066 CL6-6-6 @ 1.35 V or 1.5 V
JEDEC standard 1.35V (1.28 to 1.45V) and 1.5V (1.425 to 1.575V) power supply
800 MHz fCK for 1600 Mb/s per pin
8 independent internal banks
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with starting address 000 only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)
Bi-directional differential data strobe
Internal self-calibration through ZQ pin (RZQ: 240 ohms ± 1%)
On-Die Termination using ODT pin
Average refresh period 7.8 us at lower than TCASE 185°F (85°C), 3.9 us at 185°F (85°C) < TCASE ≤ 203°F (95°C)
Asynchronous reset
Row Active Time (tRASmin): 33.75ns (min.)