SKU: MZ-V9S2T0BW
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Samsung 990 EVO Plus 2TB Internal NVMe M.2 2280 SSD, PCIe 4.0 x4 / PCIe 5.0 x2, Up to 7,250MB/s Read & 6,300MB/s Write, V-NAND TLC, Intelligent TurboWrite 2.0, HMB, 1,200 TBW | MZ-V9S2T0B 

$ 370.00

Description

Expert Features

  • Excellent Everyday Speed: Upgrade boot times, application launches, file transfers, and demanding creative workflows with sequential reading up to 7,250 MB/s and writing up to 6,300 MB/s. Performance varies according to hardware, workload and SSD configuration.
  • Flexible PCIe 4.0 / 5.0 Interface : Support for PCIe 4.0 x4 and PCIe 5.0 x2 with NVMe 2.0 enables the drive to work with a broad range of compatible modern desktop PCs and laptops. It is not a PCIe 5.0 x4 drive.
  • Spacious 2TB Samsung V-NAND TLC : The 2TB capacity holds a substantial library of games, applications, photos, high-resolution video, and work documents. Samsung’s V-NAND TLC storage offers an efficient balance of speed and endurance.
  • High Random I/O Performance : Up to 1,000,000 random read IOPS and 1,350,000 random write IOPS (4KB, QD32) support responsiveness when working with many smaller files and demanding applications.
  • Power-Conscious Thermal Design : The nickel-coated Samsung controller improves performance per watt, offering up to 73% more MB/s per watt than the earlier 990 EVO under Samsung’s comparison conditions. Its low-profile construction suits space-conscious systems.
  • Intelligent TurboWrite 2.0 : Samsung’s enhanced write-acceleration technology speeds supported bursts of large-file activity using a dynamic write region. Actual sustained write speeds depend on workload and available TurboWrite space.
  • Host Memory Buffer Architecture : The drive uses HMB (Host Memory Buffer) rather than dedicated onboard DRAM. It accesses compatible system memory to help manage flash translation information efficiently.
  • Samsung Magician & Endurance : Samsung Magician software provides drive management, health checks and firmware updates. Samsung specifies up to 1,200 TBW endurance and a five-year limited manufacturer warranty, whichever limit is reached first, subject to regional warranty conditions.

 Expert Specifications

BrandSamsung
Product Series990 EVO Plus
US Model / Part NumberMZ-V9S2T0B/AM
Global Part NumberMZ-V9S2T0BW (region-dependent packaging)
Capacity2TB (2,000GB nominal)
Drive TypeInternal NVMe solid-state drive
Form FactorM.2 2280
InterfacePCIe 4.0 x4 / PCIe 5.0 x2; NVMe 2.0
Max. Sequential ReadUp to 7,250 MB/s
Max. Sequential WriteUp to 6,300 MB/s
Max. Random ReadUp to 1,000,000 IOPS (4KB, QD32)
Max. Random WriteUp to 1,350,000 IOPS (4KB, QD32)
Flash MemorySamsung V-NAND TLC
ControllerSamsung in-house controller, nickel-coated
Cache ArchitectureHost Memory Buffer (HMB); no dedicated DRAM cache
Write AccelerationIntelligent TurboWrite 2.0
Average Power (Read / Write)4.6 W / 4.2 W (Samsung’s stated system-level averages)
Idle / Device Sleep60 mW typical idle / 5 mW typical sleep
Operating Voltage3.3 V ± 5%
DimensionsUp to 80.15 × 22.15 × 2.38 mm
WeightUp to 9 g
Operating Temperature0–70 °C
MTBF1.5 million hours
Endurance1,200 TBW
EncryptionAES 256-bit (Class 0), TCG/Opal, IEEE1667
Management / MonitoringSamsung Magician; TRIM; S.M.A.R.T.; automatic garbage collection
Manufacturer Warranty1-year limited warranty or 1,200 TBW, whichever comes first; regional terms apply
Installation AccessoriesInstallation kit not included, per Samsung